Mei Yunhui
Professor and Doctor
Tel.:+86-022-83955699
E-mail: meiyunhui@tiangong.edu.cn
Introduction
He is the recipient of the National Natural Science Foundation of China Outstanding Young Scientists Fund and the Tianjin Municipal Distinguish Young Scientists Fund. He has been selected as the Tianjin "131" innovative talents, Tianjin "Youth Science and Technology Excellent Talents", Tianjin "Young and Middle-aged Science and Technology Innovation Leaders", and CASA Third Generation Semiconductor Innovation Excellence Youth. The applicant has published 99 and 50 papers indexed by SCI and EI, respectively. 28 invention patents have been granted. More than 30 projects, including the National Science Foundation of China (NSFC) Outstanding Youth, the Military Commission Key Preliminary Research, and the Tianjin Municipal Distinguish Youth, have been hosted by the applicant. He won the the Ministry of Education Huo Yingdong Fund Youth Science and Technology Award, IEEE CPMT Young Award, the First Prize of Technical Invention Award of China Power Supply Society (the first accomplished person), the First Prize of Technical Invention Award of China Electrotechnical Society (the first accomplished person), the First Prize of Tianjin Technological Invention (the second accomplished person) the Electrotechnical-Chint Technology Award, the APEC Best Presentation Award of IEEE International Power Electronics Conference, the Outstanding Technical Paper Award of International Conference on Electronics Packaging (ICEP), and the "Special Contribution Award" of National Third Generation Semiconductor Industry Technology Innovation Strategic Alliance (CASA).
Research areas
Packaging of power electronic devices
Main courses taught
Advanced Power Electronic Device Packaging Technology Frontiers; Micro connection and power electronic packaging; Advanced Packaging Technology for Power Electronic Devices
Main publications
[1] Li, X-D.; Lu, G-Q.; Mei, Y-H.; Reliable Aluminum Wire-Bonded SiC/Si Diodes WithLaminated Al/Cu Stress Buffers, IEEE Transactions on Power Electronics, 2022, 37(9): 10149-10153.
[2] Cao, J-L.; Li, J.; Mei, Y-H.; A Double-sided Bi-directional Power Module with LowThermal Concentration and Low Thermo-mechanical Stress, IEEE Transactions on Power Electronics,2021, 36(9): 9763-9766.
[3] Wang, M-Y.; Mei, Y-H.; Jin, J-Y.; Chen, S.; Li, X.; Lu, G-Q.; Pressureless SinteredSilver Die-Attach at 180 degrees C for Power Electronics Packaging, IEEE Transactions on PowerElectronics, 2021, 36(11): 12141-12145.
[4] Zhang, X-Y.; Wang, M-Y.; Li, X.; Ding, Z-K.; Ma, C-S.; Lu, G-Q.; Mei, Y-H.; A Method forImproving the Thermal Shock Fatigue Failure Resistance of IGBT Modules, IEEE Transactions onPower Electronics, 2020, 35(8): 8532-8539.
[5] Li, D.; Mei, Y-H.; Xin, Y-C.; Li, Z-Q.; Chu, P-K.; Ma, C-S.; Lu, G-Q. ; ReducingMigration of Sintered Ag for Power Devices Operating at High Temperature, IEEE Transactions onPower Electronics, 2020, 35(12): 12646-12650.
[6] Deng, W-B.; Mei, Y-H.; Wang, M-Y.; Li, X.; Ma, C-S.; Lu, G-Q.; A Way to Reduce LeakageCurrent and Improve Reliability of Wire-bonds for 300-A Multi-chip SiC Hybrid Modules, IEEEJournal of Emerging and Selected Topics in Power Electronics, 2021, 9(4): 4887-4896.
[7] Mei, Y-H.; Hao, B-S.; Chen, Y.; Wang, M-Y.; Li, X.; Lu, G-Q. ; Efficient Layout DesignAutomation for Multi-chip SiC Modules Targeting Small Footprint and Low Parasitic, IET PowerElectronics, 2020, 13(10): 2069-2076.
[8] Liu, J-C.; Mei, Y-H.; Lu, S-C.; Li, X.; Lu, G-Q. ; Continuously Variable MultiPermeability Inductor for Improving the Efficiency of High-Frequency DC-DC Convertor, IEEETransactions on Power Electronics, 2020, 35(1): 826-834.
[9] Wang, M-Y.; Mei, Y-H.; Liu, W.; Xie, Y-J.; Fu, S-C.; Li, X.; Lu, G-Q. ; ReliabilityImprovement of A Double-sided IGBT Module by Lowering Stress Gradient Using Molybdenum Buffers,IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, 7(3): 1637-1648.
[10] Liu, W.; Mei, Y-H.; Xie, Y-J.; Wang, M-Y.; Li, X.; Lu, G-Q. ; Design andCharacterizations of A Planar Multi-Chip Half-Bridge Power Module by Pressureless Sintering ofNanosilver Paste, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, 7(3):1627-1635.
