Zhao Chuan-Zhen
Professor and Doctor
Tel.:+86-22-13512916807
Fax:+86-22-83955164
E-mail:as3262001@aliyun.com or zhaochuanzhen@tiangong.edu.cn
Introduction
My research interests mainly focus on semiconductor materials. So far, I have been published more than 90scientific papers in high profile journals, including Applied Physics Letters, Journal of Applied Physics, Journal of Alloys and Compounds, Applied Physics Express, Applied physics A,Journal of Electronic materials, Superlattices and Microstructures, etc. A total citation is over 800 times.
Research areas
Semiconductor materials and semiconductor physics
Main courses taught
2010.09-present Undergraduate course: “Semiconductor physics”
2010.09-present Undergraduate course: “Semiconductor devices”
Main publications
[1] Chuan-Zhen Zhao*, Na-Na Li, Tong Wei, Chun-Xiao Tang, Ke-Qing Lu, A model for the bandgap energy of the N-rich GaNAs(0≤x≤0.07), Applied Physics Letters, 100 (14), 142112, 2012.
[2] Chuan-Zhen Zhao*, Tong Wei, Na-Na Li, Sha-Sha Wang, Ke-Qing Lu,A pressure dependence model for the band gap energy of the dilute nitride GaNP, Journal of Applied Physics, 2014, 116: 063512.
[3] Chuan-Zhen Zhao*, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, Pressure dependence of the band gap energy at Γ and X for the dilute nitride GaNP alloy, Journal of Alloys and Compounds, 2014, 608: 66-68
[4] Chuan-Zhen Zhao*, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, Thefactors contributing to the band gap bowing of the dilute nitride GaNP alloy, Applied Physics A, 2014, 117(3): 1447-1450.
[5] Chuan-Zhen Zhao*, Na-Na Li, Tong Wei, Sha-Sha Wang, Ke-Qing Lu, Bandgap evolution of GaN1−xAsx in the whole composition range, Applied Physics A, 2014, 115(3): 927-930.
[6] Chuan-Zhen Zhao*, Si Sang, Tong Wei, Sha-Sha Wang,Ke-Qing Lu, The temperature dependence of the band gap energy of the dilute oxygen ZnOxSe1−x, Applied Physics A, 2017, 123: 134.
[7] Chuan-Zhen Zhao*, Tong Wei, Na-Na Li, Sha-Sha Wang, Ke-Qing Lu, The origin for the formation of Al-N clusters in the Ga-rich dilute nitride AlxGa1-xNyX1-y (X=As, or P) alloys, Superlattices and Microstructures, 2014, 75: 409-415.
[8] Chuan-Zhen Zhao*, Tong Wei, Li-Ying Chen,Sha-Sha Wang, Jun Wang, The activation energy for Mg acceptor in the Ga-rich InGaN alloys,Superlattices and Microstructures, 2017, 102: 40-44.
[9] Chuan-Zhen Zhao*, Tong Wei, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, The blueshift of the band gap energy caused by In–N clusters in InxGa1-xNyAs1-y alloys depending on the N content, Superlattices and Microstructures, 2015, 85: 156-160.
[10] Chuan-Zhen Zhao*, Qiang Fu, Tong Wei , Sha-Sha Wang, Ke-Qing Lu, A model describing the band gap energy of InxGa1-xNySbzAs1-y-z(0<x≤0.5, 0<y≤0.05, 0<z≤0.1), Journal of Electronic Materials, 2017, 46(3), 1546-1551.
